The structure of nanoparticles (GAAFET) of the field effect of the gate around (based on nano-micro-electronic PHD ) (educational-research doctorate)
Researcher and author PhD student Afshin Rashid
Note: Because the width of the fin in a nano-transistor (GAAFET) is close to 5nm, changes in the width of the nano-transistor channel around the gate can cause adverse changes and loss of mobility.
A gate nano transistor - the gateway around the FET - can bypass the problem. And electrostatically, the gateway is a versatile nano-transistor where a gate is located on all four sides of the channel. It's basically a silicon nanowire around which the universe revolves. In some cases, the surrounding FET can have a common gate or other material in the channels. Horizontal layered nanoliths appear as a consensus for a 5 nm transistor. These devices start with alternating layers of silicon and silicon germanium (SiGe) that are modeled on the columns. The initial Si / SiGe heterostructure is explicit, and the column pattern is similar to the fin structure for the nano-transistor. A few for GAAFET nano sheet transistors Drilling in the SiGe layers creates an internal gap between the source / discharge, which is eventually placed next to the column and the space where the gate of the nano-transistor gate is located. This distance determines the width of the gate. Then, when the internal distances are in place, it removes a free SiGe channel. The nano -electric layer places the gate and the metal in the spaces between the silicon nanowires. To minimize grid distortion and other defects, the germanium levels of SiGe layers should be as low as possible. The choice of nano-layer in the gate nanotransistor around the gate increases with the content of Ge or germanium, and the erosion of the silicone layers during the indentation of the internal distances or gate channels. Put.
The structure of nanoparticles (GAAFET) The field effect of the surrounding gate using (Carbon Nanotube) shows a new class of semiconductor materials consisting of a single plate of carbon atoms assembled to form a tubular structure. GAAFET is a field-effect transistor (FET) that uses a CNT semiconductor as a channel material between two metal electrodes, which acts as a source and discharge contact.
Conclusion:
Because the width of the fin in a nanoparticle (GAAFET) is close to 5nm, changes in the width of the gypsum nano-transistor channel around the gate can cause adverse changes and loss of mobility.
Author: PhD Student ( Afshin Rashid)