Fabrication of tunneling quantum nano systems in resonator (Si and Gi) based nano-diodes (nano-microelectronics) (PhD)
Researcher and author: Engineer Afshin Rashid
Note: In nanotechnology, substrate surface processes (Si and Gi), including burning by plasma and ion beam technology, are performed. Such integrated circuits, with their unique features at the nanometer scale, have a variety of applications to (mesoscopic) systems.
Characterization of Si / Gi Multilayer Systems Recently there has been a discussion of the effect of negative bias voltage on nanoelectric and structural properties of Ta sputtering layer penetration barrier in Si / Ta nano system. Also in the technology of designing nanoelectronic components by using and fabricating thin films required in said integrated circuits only in environments defined by precise layering methods such as molecular beam deposition (MBE) and metal organic chemical vapor deposition (MOCVD). ) It is possible
Basically, all semiconductor-metal semiconductor components are required for all nano-electronic components. How and how nanoelectric bonds behave depends on the surface concentration of the semiconductor (Si) and (Gi) surface purification and interactions between the metal-semiconductor interface. After the invention of the nano-transistor, the concept and importance of integrated circuits became clear. Subsequently, the great success of assembling a large number of small components and electronic components on the substrate led to a major transformation in the practical fabrication of integrated circuits. With the development of the technology of miniature micro-electronic nano-components, the use of nano-tunable quantum systems in resonant nanodiodes (Si and Gi) and other nanoparticles is possible.
Conclusion :
With the development, design and fabrication of integrated nano-circuits, in particular the increase in the accumulation of very large-scale components and the attempt to make microelectronics smaller. On the other hand, new demand for integrated circuits, especially memory nano-circuits including dynamic nano-memory (DRAM) and static memory (SRAM), with features such as high-speed operation, has been compounded by day-to-day power loss . In the evolutionary process of nanomaterials electromagnetic technology, especially in the geometry and sub-micron scale of less than 2.0 micrometers, the field of nanoelectronic components design and manufacturing technology based on Gi and Si nanostructures integrated nanostructures is particularly complex.