Nano-transistors) 3-dimensional tube ( having threshold frequency as well as more mobility)

(Nano-transistors) 3-dimensional tube ( having threshold frequency as well as more mobility) PhD in nano-microelectronics

Researcher  and author: Dr.   (   Afshin Rashid)

Note: In three-dimensional tubular  nanotransistors, the very high electron movement in graphene promises a threshold frequency as well as greater mobility in the circuit. 

The main advantage of two-dimensional ballistic bipolar transistor devices in the power processing criterion is their very small and desirable delay  , which according to calculations reaches below 10fJ. Apart from graphene, other materials with a two-dimensional structure have been discovered, including   silicon and  germanium . Ideas have also been given for making 3D field nanotransistors using phosphor and graphene  . But the conventional field-effect 2D ballistic nanotransistors that have been made so far  are very slow and have a switching time of a few tenths of a millisecond, which limits their use  to frequencies of a few kHz. Other than bipolar ballistic nanotransistors and field effect Commonly, there are other ideas for using graphene or other two-dimensional materials in the construction of transistors  . One of these ideas is the 3D nano-transistor tunnel field effect, which  has the desired speed of up to several GHz, low power consumption and more current changes in  the drain  are the advantages of this transistor. There are also other nano-devices with gate voltage in the sub-threshold area,  such as ballistic bipolar transistors, as well as optical devices based on graphene   or other available two-dimensional materials.

3D nanotube transistors are tubes with a graphene wall. These pipes, as in the structure,  can be single-walled or multi-walled. On the other hand, depending on how the carbon atoms are wrapped   and arranged at the edge of the pipe, they are found in three forms (chair handle, zigzag and tube-like chiral)  . These three forms of carbon nanotubes have very different properties. For example,   the seat handle structure behaves like a metal conductor, while the chiral nanotube structure behaves like a semiconductor , combining  this function with a small adaptation of the gap energy to 3D carbon nanotubes. It also gives unique electrical and mechanical properties to 3D tubular nanotransistors. The main problem in using nanotubes in the construction of 2D ballistic nanotransistors is mainly that they must be used lying on the surface to be connected to them and a metal connection can be established to achieve the behavior of the transistor. Vertical nanotubes, on the other hand, grow faster in the proliferation of ballistic 2D nanotransistors. If semiconductor and metal nanotubes are assumed to be able to grow and orient on the surface with the desired accuracy, they will be able to compress and increase the speed of the integrated electronics as much as possible. 

Conclusion : 

In three-dimensional tubular  nanotransistors, the very high electron movement in graphene promises a threshold frequency as well as greater mobility in the circuit. 

Researcher  and author: Dr.   (   Afshin Rashid)

PhD in Nano-Microelectronics