MOSFET bulk transistors High  gate current   for more gain (PhD in nano-microelectronics)

Researcher  and author: Dr.   (   Afshin Rashid)



Note: In the  structure of field effect nanotransistors based on carbon-graphene nanotubes with bulk MOSFET  gate  for higher gain, carbon nanotubes are completely placed inside the gate insulation.  Unlike field effect transistors carbon nanotube Back gate, a large number  of these types of tubular nanotransistors can be built on a wafer, because the gates of each  are separate.


Also, due to the low dielectric thickness of the gate in the nanotransistor, a larger electric field  can be created with a low voltage on the carbon nanotube. Despite  the more sophisticated manufacturing process than rear field gate carbon nanotube effect transistors, the  above advantages make this type preferred. In the  structure of field effect nanotransistors based on carbon-graphene nanotubes with bulk MOSFET,  all nanotransistors on a wafer turn on and off at the same time, because they have the same gate. The thickness of the oxide layer is high and the production process It is such that the contact surface of carbon nanotube with gate oxide is low and makes it difficult to turn the part off with low voltage.



For the production of nanotransistors and nanochips, one of the advantages of these methods is the ease of changing process parameters and achieving optimal conditions for the production of carbon nanotubes. A major challenge in the fabrication  of field effect nanotransistors based on carbon-graphene nanotubes with MOSFET bulk is the  impurities in the products. Placing the gate around and on all the nanotubes, which improves the performance. Separating the source and drain area, si is added under the carbon nanotube. This removal continues until the bed insulation is reached. Then, using materials that have a high dielectric coefficient, insulation is created between the gate and the source and drain, as well as metal on this insulation for better connection of the gate metal to Carbon-graphene nanotubes are inserted with MOSFET bulk  .



Conclusion : 

In the  structure of field effect nanotransistors based on carbon-graphene nanotubes with MOSFET bulk  gate  for high gain, carbon nanotubes are completely placed inside the gate insulation.  Unlike field effect transistors, carbon gate nanotubes back gate , It is possible to build a large number  of these types of tubular nanotransistors on a single wafer, because the gates of each  are separate.

  • Researcher  and author: Dr.   (   Afshin Rashid)

    PhD in Nano-Microelectronics