MBCFET Multilayer Transistors (PhD in Nano-Microelectronics)
Researcher and author: Dr. ( Afshin Rashid)
Note: MBCFET multilayer nanotransistors have better and voltage scalability by reducing process nodes, minimizing the negative aspects of multilayer nanotransistor limitations. MBCFETs work by increasing the contact area between the transistor channel and the gate by scaling vertically, allowing faster loading and higher current densities compared to a flat design.
MBCFET multilayer nanotransistors, such as flat transistors, FinFET transistors eventually reach a point where they can not scale as processing nodes shrink. In order to scale, that contact area between the channel and the gate must be increased, and the method for doing this is to use CNTs multilayer carbon nanotubes. The nanofilms adjust the dimensions of the transistor to ensure that the gate is also below the channel, not just at the top and sides. This allows MBCFET multilayer nanotransistors to assemble transistors vertically.
In the structure of MBCFET multilayer nanotransistors, CNTs multilayer nanotubes have been used. The rate of increase of thermal force and resistance of nanotubes is proportional to the third root of the mass of atoms and molecules. Heating also increases the strength of the nanotube and increases its tensile strength sixfold and increases its conductivity . When electric atoms or molecules collide with carbon nanotubes, their electrical resistance changes. These effects are also present in the function and structure of MBCFET multilayer nanotransistors.
Conclusion :
Improved MBCFET multilayer nanotransistors and voltage scalability by reducing process nodes, minimizing the negative aspects of the limitations of multilayer nanotransistors. MBCFETs work by increasing the contact area between the transistor channel and the gate by scaling vertically, allowing faster loading and higher current densities compared to a flat design.