Interaction of Electronic Particles in  Nano Memory Moulcolar (PhD Nano _ Microelectronics)

Researcher  and author: Dr.   (   Afshin Rashid)




Note: The interaction of absorbed nano-graphene particles  causes this change in electrical conductivity  at the level  of Nano Memory Moulcolar  . Absorption of  small amounts of nano-electrons  with very low molecular motion alters the resistance of nano-graphene  , which is commensurate with  the molecular nanoparticles of graphene Nano Memory Moulcolar  . 

Graphene molecular nanoparticles display  unique electronic properties, and their small size, structural strength, and high performance make them very promising as a charge storage medium for nanoparticle applications. With the development of small and large devices, graphene nanostructures are emerging as an ideal material. Graphene Molecular Nano Memories  A new non-volatile charge trapping memory using isolated nano-graphene crystals and uniform distribution is used as a nano floating gate with excellent controllable capacity and uniformity. Nano-graphene load trapping memory with large memory gate (4.5 volts) at low operating voltage (8 volts), chemical and thermal stability (1000 ° C), as well as adjustable memory performance using different tunneling . Graphene has outstanding nanoelectronic properties, very high electron mobility, and unparalleled nanoscale conductivity. It is so conductive that it transmits electrons ten times faster than silicon. These properties make graphene an ideal candidate for future-generation nanoelectronic applications such as   graphene molecular nanoparticles  . The efficiency of graphene particles is measured in the protection of interfering and reinforced nano-electromagnetic nanoparticles with modified graphene nano-strips.  There are single-layer, double-layer and multi- layer graphenes  . It is the hardest known material with its low thickness. Graphene is very transparent because it is about the  thickness of an atom and transmits light and has a high nanoelectric conductivity.



Common nanoelectronic technologies in nano-memories hardly meet the demands, but nanotechnology offers better solutions. One of the new data storage tools is the use of nickel quantum dots in nanometer sizes that are expected to be used to store terabytes of data, even at home and in personal use. Given the relatively large (physically) storage devices we currently have, and the fact that we need sizes around GIGABYTE in various fields, there is a great potential for activity in this area.Each quantum dot contains a separate ball of several hundred atoms that can have one of two magnetic states. This allows them to contain a bit of information (zero or one), as is customary in machine computing. On common hard disks, the data bits must be spaced far enough apart to avoid retaliation. Quantum dots act as completely independent units that are not structurally interconnected, so they can be somewhat closer together. They can be arranged to a certain density that allows any type of information up to 5 terabytes to be stored in a space the size of a postage stamp. Activities should continue until these nanoparticles work better and work with other computing devices such as silicon chips.



Conclusion : 

The interaction of absorbed nano-graphene particles  , which changes the electrical conductivity  at the surface  of Nano Memory Moulcolar Graphene  . Absorption of  small amounts of nanoelectrons  with very low molecular motion alters the resistance of nano-graphene  , which is commensurate with  the molecular nanoparticles of Nano Memory Moulcolar  . 

Researcher  and author: Dr.   (   Afshin Rashid)

PhD in Nano-Microelectronics