FinFET nano-transistors and CNTs conductive nanotubes (internal structure and structure) based on nano- microelectronics PHD

FinFET nano-transistors and CNTs conductive nanotubes (internal structure and structure) based on nano- microelectronics PHD (educational-research doctorate)

Researcher  and author PhD student:    Afshin Rashid

Note: Because FinFEET nano-transistors have access   to a larger discharge current in the nano-transistor, the channel width depends on the height as well as the thickness, which the nano-CNTs layers keep in a smaller range

   FinFEET nano-transistors are a nano-transistor of a  semiconductor metal-oxide-semiconductor field  that is built on a bed  . The gate is located on two, three or four sides of the canal or is twisted. The canal forms a double gate structure. These devices are commonly known as finfets because they form the source / discharge area of ​​the fins on the silicon surface. FinFET devices have significantly faster switching and density  than Nano wire nanoparticles  (using metal oxide and semiconductor metal supplements)  .

Due to the reduction in the scale of semiconductor components and integrated circuits up to the nanometer range, in the FinFET nanoparticle the reduction of scale causes more short channel effects, less gate control, increased leakage currents, severe process changes and unmanageable power densities. Between the carbon and metal nanotubes used to connect the source and the drain, a FinFET nanoparticle forms a shuttle barrier (SB). The formation of Shatki dams in the source and drain section of a transistor significantly reduces the flow during these FinFET nanoparticles. Therefore, for higher operational efficiency of Finfet nano-transistor components, suitable metals are required that can be used at the source connection and in this nano-transistor and create ohmic connection.

Conclusion: 

The ability of carbon nanotubes to be used in FinFET nanoparticles is due to their hollow and high contact surface. This contact surface consists of the outer wall of the nanotube and its hollow middle parts. In FinFET nano-transistors, when an electric field is applied  , the carbon nanotube located between the source and the  drain contains the moving load . The density of these loads is for the source  , and this density is possible by the electric transfer in the multi-layered nanotubes for the same interface  .

Author: PhD Student  ( Afshin Rashid)

PhD student in Nano-Microelectronics at Islamic Azad University, Science and Research Branch, Tehran