Characterization of Si / Ta / Cu Multilayer Systems Based on Nano-Micro PhD (Research PhD)
Author and researcher: Engineer Afshin Rashid
Note: Characterization of Si / Ta / Cu Multilayer Systems There is a background of the effect of negative bias voltage on improving the electrical and structural properties of Ta sputtering layer penetration barrier in Si / Ta system.
In nanoelectronics design technology using thin films required in said integrated circuits only in environments defined by precise deposition methods such as molecular beam labeling (MBE) and metal organic chemical vapor deposition (MOCVD). It is possible .
Nanoelectronics and Surface Processes (Si Substrate)
In nanotechnology, Si substrate processes, including combustion, are carried out by plasma and ion beam technology. Such integrated circuits with their unique features at the nanometer scale have a variety of uses for mesoscopic systems.
Some of these applications include:
_ Construction of dots and quantum tunneling diodes, resonator systems such as Si and Gi
_ Designing and manufacturing the laser amplifiers like InGap
_ Design and manufacture of micro-micron Ahsasgrha and machines for special applications
Due to the importance of nanotechnology as the state of the art continues to grow and expand, we will witness a major transformation in the field of communications.
Nanoelectronics and surface processes (Ta layer)
Investigation of the electrical properties of materials is mainly based on band theory, in which the electron energy levels and density of states determine the metal or semiconductor or the insulation of the material. These energy levels differ in the mass of the material and in the surface of the thin films. As such, some banned energy levels are allowed to become discrete levels in the mass state. Also in the joint season where the two levels interact, they affect other energy levels. These topics are applied to the interconnections between different parts of integrated circuits, microelectronics, electronics, etc. using thin films.
The electrical properties of the thin films are strongly dependent on their morphology. Among them, the best conductivity is related to coherent thin films and the least conductivity is in layers with separated particles. In coherent metal layers, the conductivity is much higher than non-coherent metal layers. But unlike cohesive metal layers, the conductivity of non-cohesive metal layers increases with increasing temperature.