Changes in the channel width of the nano-transistor around the gate field effect can cause undesirable changes and loss of mobility (

Changes in the channel width of the nano-transistor  around the gate field effect can cause undesirable changes and loss of mobility (PhD in Nano-Microelectronics)

Researcher   and author: Dr.   (  Afshin Rashid)

Note: Because the width of the fin in a nanotransistor (GAAFET) is close to 5nm, changes in the channel width of the nanotransistor  around the gate field effect can cause undesirable changes and loss of mobility. 

A gate nanotransistor - the gateway around the FET - can bypass the problem. And  electrostatically, the gate gate is a versatile nano-transistor in which a gate is placed on all four sides of the channel. It's basically a silicon nanowire that the universe revolves around. In some cases, the surrounding FET may have a common gate or other material in the ducts. Horizontal layered nanolots appear as the consensus for the 5 nm transistor. These devices start with alternating layers of silicon and silicon germanium (SiGe) that are patterned into columns. The initial heterostructure of Si / SiGe is explicit and the columnar pattern is similar to the fin structure for nanotransistors. Several for GAAFET nano sheet transistors The indentation in the SiGe layers creates an internal distance between the source / discharge, which ultimately sits next to the column and the space at the gate of the nanotransistor gate. This distance determines the opening width of the gate. It then removes a free SiGe channel etch when internal distances are in place. The nanoelectric layer places the  gate and the metal in the spaces between the silicon nanowires. To minimize lattice distortion and other defects, the germanium content of SiGe layers should be as low as possible. The choice of nanoplayers in the surrounding gate transistor  nanotransistors increases with Ge or germanium content, and the erosion of the silicon layers during indoor or indentation channel indentation of the nanotransistor and channel release channels affects the thickness of the surrounding gate channel and consequently the threshold voltage. Put.

The structure of nanotransistors (GAAFETs) The field effect of the surrounding gate using   (Carbon Nanotube) represents a new class of semiconductor materials consisting of a single plate of carbon atoms assembled to form a tubular structure. GAAFET is  a field effect transistor (FET) that uses the CNT semiconductor as a channel material between two metal electrodes, which acts as the source and discharge contacts. 

Conclusion :

Because the fin width of a nanotransistor (GAAFET) is close to 5 nm, changes in the channel width of the nanotransistor  around the gate field effect can cause undesirable changes and loss of mobility.

Researcher  and author: Dr.   (   Afshin Rashid)

PhD in Nano-Microelectronics