Section _ reproduction and production of nanowires

Fabrication methods of vertically aligned cobalt nanowire arrays on flat surfaces as well as field emission (FE)

Researcher  and author: Dr.   (   Afshin Rashid)



Note: Fabrication of arrays of vertically aligned cobalt nanowires on flat surfaces and field emission (FE) using them as electron cathodes is used.

These arrays are obtained by electrodeposition in the form of nanoparticles on Au/Ti/Si substrates at very low temperature (<100°C).  After pattern removal, the arrays consist of structurally upright nanowires with high aspect ratios, uniform dimensions, and predetermined densities.  Electron field emission measurements of metallic properties and propagation of cobalt nanowires.



A useful flat bed of  silicon wafer particles linked with nanowires  and  for biological applications, Si (silicon wafer) has properties similar to glass and can be used to mount or grow nanowire particles.  It can be easily wiped off or used as a whole wafer for the propagation of nanowires. Silicon nanowire arrays or SiNWs are vertical arrays of silicon nanowires on a flat crystalline silicon wafer substrate.  These nanowires are made by a catalytic oxidation and dissolution of Si in the presence of metal catalyst nanoparticles - a self-organized process commonly  known as silicon wafer-  assisted metal-chemical enhanced process. 



Silicon wafers  For biological applications, silicon is similar to glass, which makes it a suitable support for the growth and/or nanoparticle mounting of nanowires.  For nanoelectronics applications, it is an ideal sample substrate for small nanoscale particles due to its low background signal and highly polished surface. The processes of nanowire propagation on   silicon wafers  make the Si Nanowire arrays more reproducible and uniform, and allow the properties of the nanowires to be tuned. The propagation process of nanowires always involves the deposition of a metal and bonding in a solution containing hydrofluoric acid (HF) and an oxidant.  Silicon is produced only where metal nanoparticles touch silicon, as a result of electrochemical reactions with the help of nanoparticles,  as silicon is carried, the nanoparticles move into the resulting nanoparticles.  Since silicon is only locally doped, this process can lead to very high aspect ratio features in nanowires.



Conclusion: 

Fabrication of arrays of vertically aligned cobalt nanowires on flat surfaces and field emission (FE) using them as electron cathodes are used.

Researcher  and author: Dr.   (   Afshin Rashid)

Specialized doctorate in nano-microelectronics