Characterization of Si / Gi multilayer systems in the field of the effect of negative bias voltage on the improvement of nanoelectric

Characterization of Si / Gi multilayer systems in the field of the effect of negative bias voltage on the improvement  of nanoelectric and structural properties of Ta sputtering penetration layer in Si / Ta system (nanotransistor)

Researcher  and author: Dr.   (   Afshin Rashid)

Note: Characterization of Si / Gi multilayer systems Recently, there is a negative bias voltage effect on improving  the nanoelectric and structural properties of the Sputtering Ta layer in the Si / Ta nano system.

 Also in the technology of designing nano-electron components  using and fabricating the thin layers required in the mentioned integrated circuits only in  environments defined by precise layering methods such as molecular beam layering (MBE) and chemical vapor layering of metallic organic materials  (MOCVD). ) It is possible. In nanoelectronics technology, underlying surface processes (Si and Gi) such as combustion are performed by plasma technology and ion beam. Such integrated circuits with their unique properties at the nanometer scale have a variety of applications of (mesoscopic) systems.

Basically, semiconductor-metal connections are a necessary component of all nano-electronic components. How nanoelectric joints behave depends on the surface concentration of the semiconductor  (Si) and (Gi) surface cleanliness and the reactions between the metal-semiconductor interface. After the invention of nanotransistors, the concept and importance of integrated circuits became clear. After that, the great success of assembling and connecting a large number of small components and electronic components on the substrate created a huge change in the practical construction of integrated circuits. With the invention and development of technology for miniaturizing nano-micro-electronic components, it is possible to use the fabrication of tunneling quantum nanosystems in nanoparticles (Si and Gi) and other nanoparticles.With the expansion, design and construction of integrated nanocircuits, especially the increase in the accumulation of components on a very large scale and efforts to reduce micro-electronic components continued. On the other hand, the new demand for integrated circuits, especially memory nano-circuits, including dynamic nano-memory (DRAM) and static memory (SRAM) with features such as high operating speed while reducing power dissipation, increased day by day  . In the evolution of the technology of foraminizing electronic nanoparticles, especially in geometry and sub-micron scales less than 2.0 micrometers, ie the field of nanotechnology design technology and fabrication technology based on Gi and Si nanostructures of integrated nanocircuits has a special complexity.

Conclusion : 

Characterization of Si / Gi multilayer systems Recently, there is a negative bias voltage effect on improving  the nanoelectric and structural properties of the Sputtering Ta layer in the Si / Ta nano system.

Researcher  and author: Dr.   (   Afshin Rashid)

PhD in Nano-Microelectronics