In a FET graphene nanotransistor, the resistance between two electrodes can be moved or controlled by a third electrode

In a FET graphene nanotransistor, the resistance between two electrodes can be moved or controlled by a third electrode (PhD in Nano-Microelectronics).

Researcher  and author: Dr.   (   Afshin Rashid)

Note: Graphen nano-graphene was used in the nanoelectronics industry and in the manufacture of FET graphene nanotransistors due to its properties such as high electron and hole mobility and thermal and mechanical stability.

Although graphene is a semiconductor material with zero gap and unsuitable for logic circuits, but using nanoelectronic technology, different forms of this material are created to produce FET graphene nanotransistors that have different gaps (eV 2.1-0). Graphene nanofibers, multilayer graphenes, and graphene grown on SiC to amplify FET graphene nanotransistors are such shapes that have had a tremendous impact on the design industry of new nanoelectronic devices. FET graphene tunnel field, in which drain and energy-free graphene are used in the drain and source areas, and graphene with limited-band gap (eV2 / 1) is used in its catalytic part. 

In the proposed structure, the rate reaches a suitable level, which is a FET graphene nanotransistor, which is a suitable value for digital structures, and also the output properties show a very good state of saturation. There are basic parameters such as doping concentration, drain voltage, dielectric thickness and the difference between the gate and graphene electrode working functions in the three structures. Increasing the doping rate has an effect on the on current and increases it, which increases the doping rate of FET graphene nanotransistors, which make these structures very suitable for use in low power devices.The term transistor is a combination of the words transfer and resistance. In a FET graphene nanotransistor, the resistance between two electrodes can be transmitted or controlled by a third electrode. Source connection and drain connection take place through a semiconductor (graphene nanoplayer). The nano electrode of the gate is separated from  the semiconductor by the electrical insulation of the dielectric layer of the gate. Therefore, the gate nano-electrode  is attached to the semiconductor as a graphene layer and controls the electrostatic potential of the semiconductor / insulation interface  .

Conclusion : 

Graphen nano-graphene was used in the nano-electronics industry and in the manufacture of FET graphene nanotransistors due to its properties such as high electron and hole mobility and thermal and mechanical stability.

Researcher  and author: Dr.   (   Afshin Rashid)

PhD in Nano-Microelectronics