Field Effect Nano Transistors (Nano Teransistor Mosfet)
(Field Effect Nano Transistor) and Sade Schottky (SB)
Researcher and author: Dr. ( Afshin Rashid)
Note: The connection between the carbon and metal nanotubes used to connect the source and drain forms a Schottky barrier (SB) in a CNTFET. The formation of Schottky barriers in the source and drain of a transistor causes a significant reduction in the current sent in the transistor.
The lack of precise control over the positioning of CNTs during CNFET manufacturing causes irregularity in the nanotubes, less than half percent of the nanotubes made on the single crystal diamond substrate are irregular. Irregular nanotubes may cause a short circuit between output and feed. Therefore, for the higher operational efficiency of CNFET parts, suitable metals are needed that can be used at the junction of the Sury and Drain and create an ohmic junction.
When the electric field is applied to the CNTFET nanotransistor, the carbon nanotube that is between the source and the drain contains the moving charge. The density of these charges is for the source, and this density is determined by the Dirac Fermi probability distribution for (Drain_Drain). The ability of carbon nanotubes to be used in gas sensors is due to their hollowness and high contact surface. This contact surface consists of the outer wall of the nanotube and its empty middle parts. Physico-chemical absorption of gases in nanotubes changes their conductivity. Due to the reduction of the scale of semiconductor components and integrated circuits to the nanometer range, the semiconductor industry will face many challenges. Downscaling causes more short channel effects, less gate control, gain Exponential leakage currents, extreme process changes and power densities become unmanageable. CNTFET is an option for the transistor in order to have the possibility of continuing to reduce the dimensions and to develop new structures, the carbon nanotube field effect transistor is one of the most prominent topics in nanotechnology, carbon nanotubes.
Conclusion :
The connection between the carbon and metal nanotubes used to connect the source and drain forms a Schottky barrier (SB) in a CNTFET. The formation of Schottky barriers in the source and drain of a transistor causes a significant reduction in the current sent in the transistor.