Carbon nanotubes as an alternative to silicon in the MOSFET transistor channel (PhD in nano-microelectronics)
Researcher and author: Dr. ( Afshin Rashid)
Note: Carbon nanotubes are tubes with graphene walls. These pipes can be single-walled or multi-walled. And is used in amplification of CMOS nanotransistors.
On the other hand, depending on how the carbon atoms are wrapped and arranged at the edge of the tube, they are found in three forms: chair handle, zigzag or 1 These three types of carbon nanotubes have very different properties. For example, two chiral chair handle structures behave like metal conductors, while the chiral structure behaves like a semiconductor, and the small part of the gap energy with carbon nanotubes reacts with unique electrical and mechanical properties. For example, the structure of a nanotube that is a thousand times larger than copper and metal nanotubes are capable of carrying electric current with a density of cm / A, and these properties have led to the use of this material in the manufacture of electronic devices such as CMOS (semiconductor) transistors to be used. Carbon nanotubes have been proposed as an alternative to silicon in the MOSFET transistor channel. Nanotubes can reduce some problems Extensively lift the channel length in the transistor, such as tunneling electrons from inside the channel or from the gate into the channel.
Nanotubes other than CMOS nanotransistors in the manufacture of meters and actuators ; Supercapacitors are also used in many other industries. The main problem with using nanotubes is mainly that they have to be used lying on the surface so that they can be bonded and metal bonded to achieve the CMOS transistor behavior. This is while the nanotubes grow vertically. In addition, it must be possible to precisely control the characteristics of each nanotube as well as its growth location and length. Increase the speed as much as possible to provide integrated electronics.
Conclusion of carbon nanotubes in amplification and fabrication of CMOS nanotransistors:
Nanoelectronic circuits, especially RF blocks and microwaves, require very high-speed switches. Typically transistors with very high speeds, up to 2, and heterogeneous bipolar MOSFET transistors with high electron mobility are up to about 600GHz and 750GHz, respectively. These CMOS nanotransistors are combined with composite semiconductors, especially nanotubes. The structure of nano-electronic compounds Optical and optoelectronic devices may make the most of these semiconductor compounds. The main reason for the possibility of energy gap engineering in these compounds is unlike silicon.
Researcher and author: Dr. ( Afshin Rashid)
PhD in Nano-Microelectronics