_Part of endohedral nanostructures 

Bonding  ( endohedral nanostructures)  and nanotransistors  

Researcher  and author: Dr.   (   Afshin Rashid)



Note:  ( endohedral nanostructures) the electronic properties of the two regions are "protected" in a special, so-called topological, different way. "And therefore, a new very strong quantum state is created in the transition region.   

This localized electronic quantum state can now be used as a key feature to produce certain semiconductors, metals or insulators – and possibly even as a feature in nanoelectronics. The shapes and sizes of  (endohedral nanostructures)  are naturally determined based on the composition and conditions of their formation. The characteristics  of nanostructures, in turn,  determine the originality of the characteristics (endohedral nanostructures)  and their possible fields of operation  . The range of 1 to 1000 nm is introduced as the range of nanostructures, the  important feature (endohedral nanostructures)  is the control of the processes of the organization itself. The range of activity change  (endohedral nanostructures)  depends on the nature and shape of the nanostructure. However  , if the energy of the nanoparticle field is comparable to the energy of electromagnetic radiation and if  significant changes are made in a certain wavelength range with the occurrence of chemical reactions in the irradiated materials, the activity of nanoparticles  up to 100nm will be significant.     


Nano-microelectronics deals with new methods for making nano-transistors on a small scale,  whose dimensions are in the range of tens of nanometers, which is derived from the science called nanotechnology. Unlike today's nano-transistors, which behave based on the movement of a mass of electrons in matter, new devices follow the phenomena of quantum mechanics at the nano scale, in which the discrete nature of electrons cannot be ignored. By reducing all the horizontal and vertical dimensions of the transistor, the electric charge density in different areas of the nano-transistor  increases, or in other words, the number of electric charges per unit area of ​​the nano-transistor increases.


This event  has two negative consequences: First, with the increase in electric charge density, the possibility of electric charge discharge from the insulating areas of the transistor increases,   and this event causes damage to the transistor and its failure. This event  is similar to the discharge of excess electrical charge between the cloud and the ground in the phenomenon of lightning, which causes the ionization of air molecules into  negative and positive ions. Secondly,  with the increase of the electric charge density, the electrons may  leave the radius of one atom and enter the radius of the adjacent atom under the influence of repulsive or abduction forces, which have now increased in value. This  is called tunneling in quantum physics. Electron tunneling from one atom to the adjacent atom is a phenomenon that  happens a lot between electrons in small dimensions. This phenomenon is the basis of the work of some electronic components and some  nanoscopes.


But in nanotransistor, this phenomenon is not a useful phenomenon, because electron tunneling from one atom to the adjacent atom may  continue and cause an electric current. Although this electric current may  be very small, but because it is unwanted and unanticipated, it acts as a leakage path for electric current  and changes the electrical behavior of the nano-transistor.



Conclusion :

Nanostructures Nano structure  The electronic properties of the two regions are "protected" by a special, so-called topological, different method. And therefore, a new very strong quantum state is created in the transition region.

Researcher  and author: Dr.   (   Afshin Rashid)

Specialized doctorate in nano-microelectronics