Field Effect Nano Transistors (Nano Teransistor Mosfet)
Field effect nanotransistors (back and combined gate)
Researcher and author: Dr. ( Afshin Rashid)
Note: In field effect nanotransistors (back and combined gate) , the silicon substrate plays the role of the gate, which in this structure is called the back gate . Then, the upper gate nanotransistor, which was suitable for use in integrated circuits , with the addition of an upper gate that is separated from the nanotube channel by a thin layer of oxide, field effect nanotransistors are similar to carbon nanotube based transistors.
with the difference that instead of carbon nanotubes, graphene is used in its channel. The unique properties of graphene, such as electron mobility and high thermal conductivity, resistance to breakage, suitable for low light absorption and band gap , make it possible to make high-speed electronic components in flexible and transparent electronic circuits using this nanomaterial.
In terms of structure, common gate graphene nanotransistors can have back and combined gate types (upper and lower). Combined gates (Not; or; And; Nand) are used in the manufacture of nanochips by nanotransistors. Design , Fabrication, development and use of field effect nano transistors (back and combined gate ) whose sizes are in the range of 1 nm to 100 nm , field effect nano transistor design they say In fact, we are talking about miniaturization, which allows for more contact, more activity, and an increase in area. Nano is a new scale in technologies and a new approach in all disciplines, and it gives mankind the ability to expand its involvement in the structure of materials and design and manufacture in very small dimensions and in all technologies. that the human being has already achieved, to have an effect . And field effect nanotransistors (back gate and hybrid) have been considered in the production of electronic and biological nanotechnology. Implantable nanochips in the body and military industries depend on the progress in the field of field effect nanotransistors (back gate and hybrid) . Field effect nanotransistors ( back and combined gate) They are the main electronic components that are used as amplifiers in analog nano circuits or electronic nano switches in digital circuits. And their progress is the main key of nanoelectronics in the field of production and monopoly (nanochips), both in the field of military and biological industries. Field-effect nanotransistors (back gate and combined) and the technology of making integrated nano circuits have become the most common technology based on them, i.e. CMOS, in the micro and nano electronics industry. This industry and the technology of manufacturing integrated circuits, this advantage of nanoelectronics is doubled in reducing the size of transistors and the number of transistors used in each chip. Shrinking the dimensions of transistors leads to an increase in speed and a decrease in power losses.Nanotube-based field-effect transistors and carbon-based field-effect transistors, field- effect nanotransistors (back gate and hybrid) are very serious candidates to replace graphene and conventional silicon transistors.
Conclusion:
In field effect nanotransistors (back and combined gate) , the silicon substrate plays the role of the gate, which in this structure is called the back gate . Then, the upper gate nanotransistor, which was suitable for use in integrated circuits , with the addition of an upper gate that is separated from the nanotube channel by a thin layer of oxide, field effect nanotransistors are similar to carbon nanotube based transistors.
Researcher and author: Dr. ( Afshin Rashid)
Specialized doctorate in nano-microelectronics