_ Nanoelectronics and Plasmonic Particles Department
Nanoplasmonic technology in nano-optical electrical devices (xAs-AlxGa1) in (x<45.0 mode)
Researcher and Author: Dr. ( Afshin Rashid)
Note: Nanostructures in nano-optical devices (xAs-AlxGa1) are found in (x<45.0) mode along with variations in the distance between the valence band edge and the conduction band edge with changing x in three different directions of wave propagation.
Due to the lack of suitable insulators for use in transistor gates, as well as the high cost of the elements and the deposition process of compound semiconductors, silicon and ultimately the silicon-germanium alloy continue to be used as the main semiconductors. It should be noted that nanostructures , which can be easily deposited with high purity, are very suitable insulators for this purpose. Today, in integrated circuits with channel lengths below 50nm, alternative oxides with higher dielectric constants such as zirconium oxide ZrO2 and hafnium oxide are used. The use of HfO2 in ternary alloys of compound pairs of elements can be achieved by changing the ratio of the two elements present, different properties for the semiconductor. For example, in xAs-AlxGa1 and xN-InxGa1, changing x leads to a change in the energy gap and many of the properties of these semiconductor compound materials are due to the band structure energy.
One of the most important properties of metal nanoparticles is their electronic properties. Metal nanoparticles are semiconductors with zero band gap and high electrical conductivity . As we know, each carbon atom has 1 electron that participates in chemical bonds, but in graphene, each carbon atom is connected to 9 other carbon atoms in a two-dimensional space. The remaining single atoms create p orbitals at the top and bottom of the graphene plane, and these orbitals create carbon-carbon double bonds. The electronic properties are imposed on graphene by (bonding orbitals) and (antibonding orbitals) of double bonds. Graphene shows very high electron mobility at ambient temperature.
The optical strength of metal nanoparticles is 22 mN, the breaking strength is 12, and its Young's modulus is 4 Tpa. Despite its high hardness and strength, it is very light and its density is (1.77 ml/mg). The (optical) properties of the monolayer membrane of metal nanoparticles are measured by the AFM technique.
Conclusion:
Nanostructures Nanostructures in nano-optical devices (xAs-AlxGa1) in (45.0 < x) mode along with changes in the distance between the valence band edge and the conduction band edge with changing x in three different directions of wave propagation.
Researcher and Author: Dr. ( Afshin Rashid)
Specialized PhD in Nano-Microelectronics