Plasmonic nano-lithography and the possibility of modeling materials for electronic devices and devices with nano-scale resolution (PhD in nano-microelectronics)
Researcher and author: Dr. ( Afshin Rashid)
Note: Plasmonic nano-lithography includes a set of top-down fabrication techniques that allow the modeling of materials for nano-scale electronic instruments and devices. Nano-lithography in nanoelectronics is complemented by plasmonic and self-organizing nano-lithography to offer a wide variety of nanostructured strategies.
In order to take advantage of significant advances in nanoscale electronics, there is an urgent need for high-performance, high-performance nanotechnology that is compatible with frequent design changes. Common methods of maskless nanolithography, such as plasmonic nanolithography and probe scanning lithography, can provide good flexibility, but have been shown to be largely slow due to their ability to scan and their limited speed. The technological properties of plasmonic lenses are such that they activate a point below 100 nm with approximately twice the intensity of the incident light. Used to achieve high speed scanning. By controlling the range according to the position of plasmonic nano-lithography On the surface of light resistance, arbitrary nano-pattern is performed at high speed with a spatial resolution of up to 80 nm, such a low-cost and high-performance nanotechnology method promises a new path to produce the next generation nano. This is a high-performance maskless nanolithography using plasmonic optical lenses at speeds of more than 20 miles per hour above an optical image. This research will also be applicable to other nanoproduction processes because it is the precise backbone of any nanoproduction process.
In essence, high-velocity plasmon nanoparticles with half-step resolution (22 nm) allow us to produce nano-electronic devices that can create 12-inch wafers in minutes. This is comparable to conventional photolithography at the production level but at a much higher resolution than the 22 nm half-step size. This new design enables low cost, high-performance nano-scale maskless production with several times higher power than conventional maskless methods. Using shorter wavelengths of plasmonic nanithithography and conduction mechanisms, it is possible to increase the continuous scale to a nodule size of less than 22 nanometers, opening a promising path for next-generation lithography to produce semiconductors. In addition, the next generation of magnetic data storage, known as nano-bit heat and media-assisted nanoelectronic devices and devices, has the potential to have twice the capacity in the future .
Conclusion :
Plasmon nano-lithography involves a set of top-down fabrication techniques that enable the modeling of materials for nano-scale electronic instruments and devices. Nano-lithography in nanoelectronics is complemented by plasmonic and self-organizing nano-lithography to offer a wide variety of nanostructured strategies.
Researcher and author: Dr. ( Afshin Rashid)
PhD in Nano-Microelectronics