Field Effect Nano Transistors (Nano Teransistor Mosfet)
Field effect nano transistors based on UTS Mosfet (a type of nano transistor with high dielectric coefficient)
Researcher and author: Dr. ( Afshin Rashid)
Note: In the structure of field-effect nano-transistors based on carbon-graphene nanotubes with UTS , carbon nanotubes are completely placed inside the gate insulation .
Placing the gate around and in the entire nanotube that improves the performance. First, the carbon nanotube that has an insulating coating is placed on the wafer, and the source and drain metal connections are placed on both sides of it, then to determine To separate the source and drain area, si is added under the carbon nanotube. This removal continues until reaching the insulation of the substrate. Then, by using materials that have a high dielectric coefficient, insulation is created between the gate and source and drain, and metal is placed on this insulation to better connect the gate metal to the carbon nanotube.
In the structure of field-effect nanotransistors based on carbon-graphene nanotubes with UTS, the process of making nanotubes has caused variability in the diameter of the tubes, which usually has a value between 1 and 2 nm. By changing the diameter of the nanotube , the band gap changes, and as a result, the threshold voltage of the UTS transistor and the current of the UTS transistor change. Unlike back gate carbon nanotube field effect transistors, a large number of this type of transistor can be made on one wafer, because the gates of each one are separate. Also, due to the small thickness of the gate dielectric in the nano-transistor, a larger electric field can be created with a low voltage on the carbon nano-tube. all Field effect nano transistors based on carbon-graphene nanotubes with UTS on a wafer turn off and on at the same time because they have the same gate. The thickness of the oxide layer is high, and on the other hand, the production process is such that the contact surface of the carbon nanotube It is low with gate oxide and it creates problems to turn off and turn on the part with low voltage.
Conclusion :
In the structure of field-effect nanotransistors based on carbon-graphene nanotubes with UTS , carbon nanotubes are completely inserted into the gate insulation for more benefit .