_ Nanoplasmonics and Nanoelectronics Model Section
Applications of nanoplasmonic patterns in the fabrication of integrated circuits and other electronic devices
Researcher and Author: Dr. ( Afshin Rashid)
Note: High-speed plasmonic nanolithography with a half-step resolution of 22 nm uses multi-step plasmon focusing via relatively low-emission surface plasmons that are focused and then converted into localized plasmons. This allows for highly efficient transfer and near-field spot focusing, which is key to improving throughput for a given laser power, by increasing the scan speed and/or using a number of parallel patterns.
In principle, high-speed plasmonic nanolithography with half-pitch resolution (22 nm) allows us to fabricate nanoelectronic devices that can create a 12-inch wafer in minutes. This is comparable to conventional photolithography at the production level but at a much higher resolution than the 22 nm half-pitch size. This new design enables low-cost, high-performance maskless nanoscale fabrication with several orders of magnitude higher throughput than conventional maskless methods. It may be possible to scale the continuous process to a node size smaller than 22 nm by utilizing the shorter wavelength of plasmonic nanolithography and the guiding mechanisms, opening a promising path for next-generation lithography for semiconductor manufacturing. Furthermore, next-generation magnetic data storage, known as nanobit-patterned thermally and media-assisted nanoelectronic devices, has the potential to achieve two orders of magnitude higher capacity in the future.
The application of nanolithography is the fabrication of integrated circuits and other electronic devices, where optical lithography is widespread. In addition, various types of nanolithography techniques are used in research activities aimed at patterning materials and realizing prototypes and proof-of-concept devices. Methods of applying nanolithography on a spin substrate Due to the specific interactions between these polymers and the substrate , under certain conditions, the two types of polymers tend to create an interwoven pattern , there is a local order between both polymers and form nanowire-like domains with a period in the range of 50 nm. This pattern will be very useful if subsequently applied to nanolithography which, after landing on the substrate due to its lower diffusion mobility, tends to accumulate on top of the polymer. Thus, the underlying thin structure follows the polymer scaffold, which extends without disruption over several microns. However, the formed nanowires reveal some unwanted features as a closer look reveals significant roughness in the nanowire fabrication, as well as nanowires being cut at certain points and deviating from the straight shape, all of which are typically the origin of deterioration in the physical properties of nanowires. Furthermore, long-range ordering of the fabricated nanowire array following this strategy is not achieved, which is essential in certain applications such as the semiconductor industry.
Conclusion:
High-speed plasmonic nanolithography with a half-step resolution of 22 nm uses multi-step plasmon focusing via relatively low-emission surface plasmons that are focused and subsequently converted into localized plasmons. This allows for highly efficient transfer and near-field spot focusing, which is key to improving throughput for a given laser power, by increasing the scan speed and/or using a number of parallel patterns.
Researcher and Author: Dr. ( Afshin Rashid)
Specialized PhD in Nano-Microelectronics