Compounds (III-V) nano-optical and nanoelectronic devices based on nano-microelectronics (Ph.D.)
Researcher and author: Engineer Afshin Rashid
Tip: Perhaps nano-optical and nanoelectronic devices get the most out of these semiconductor (III-V) compounds. The main reason for the possibility of engineering the energy gap in these compounds is over silicon.
Compounds (III-V) are the main factor in nanocarriers such as light-emitting diodes to determine this spectrum, the energy band gap used in semiconductors. There is no alternative to changing the energy band gap than using semiconductor compounds instead of semiconductor elements. A few decades ago, LEDs were still made with two spectra of red and green light, but the possibility of making high-bright blue nano-LEDs remained an unsolved mystery. GaN blue LED spectroscopy with GaN enabled white light production with LED. Some of the nano-LED bulbs are the most expensive bulbs that are getting wider day by day. Optical detectors are key components of these circuits. The main platform for making these circuits is the photonic crystal.Components (III-V) of nano-optical and nanoelectronic devices are among the most widely used nano-microelectronics. It now attracts the ability to connect between silicon processor cores and memory by integrated semiconductor optical communication channels, with very high data transfer rates in other interconnection technologies and interconnections to integrated nano-electronics processors .
Compounds (III-V) nano-optical devices
III-V Compounds other than some of the group 4 elements of the periodic table, such as Si and Ge, are semiconductors, compounds of the elements of group 3 with 5, group 2 with 6, and alloys of group 4 with 4 also have semiconductor properties. Even some compounds from the three elements of these groups, such as AlGaAs and InGaN, also have semiconductor properties . At the beginning of their identification and research, they were thought to be replaced by silicon soon, because of the ability to engineer and obtain certain properties, which There was no silicon, it was possible for them. But due to the lack of suitable insulation for use in transistor gates as well as the high cost of the V-III composite semiconductor elements and process, the silicon-germanium alloy remains the main semiconductor.
It should be noted that silicon oxide, which is easily layered with high purity, is a very good insulator for this purpose. Today, in complex circuits with channels below 50nm, alternating oxides with higher dielectric coefficients such as ZrO2 zirconium oxide and hafnium oxide are obtained. . For example, in xAs-AlxGa1 and xN-InxGa1 the change of x leads to the change of the energy band and many of the properties of these semiconductor composites lead to the structural band energy. Compounds (III-V) find nano-optical devices (xAs-AlxGa1) in (x <45.0 mode) with variations of the capacitance edge edge with the conductivity edge edge by varying x in three different wave propagation directions.