Carbon nanotubes in replication and fabrication of CMOS nano-transistors based on nano-microelectronics (Ph.D.)
Researcher and author: Engineer Afshin Rashid
Note: Carbon nanotubes are tubes with graphene walls. These pipes can be single-walled or multi-walled. It is used in the replication of CMOS nano-transistors.
On the other hand, depending on how the carbon atoms are wrapped and arranged at the edge of the tube, they can be found in three types of chair, zig-zag or 1. These three types of carbon nanotubes have very different properties. For example, the 2-chiral structure has a metal conductor chair structure, whereas the chiral structure has a semiconductor behavior, and its reaction is a small fraction of the band gap energy with the carbon nanotubes having unique electrical and mechanical properties.
For example, the structure of a nanotube that is thousands of times larger than copper and the metal nanotube is capable of carrying electrical current at a density of cm / A, and these properties make it useful in the manufacture of electronic devices such as semiconductor CMOS transistors. Be. Carbon nanotubes have been proposed as a replacement for silicon in the MOSFET transistor channel. Nanotubes can greatly eliminate some of the problems of channel length reduction in transistors such as tunneling of electrons through the channel or from the gate to the channel .
Nano-tubes other than CMOS nano-transistors are used in the manufacture of metrics and actuators of supercapacitors as well as in many other industries. The main problem with the use of nanotubes is mainly that they have to be used on the surface to be bonded and metal bonded to achieve CMOS transistor behavior. However, the nanotubes grow vertically. In addition, it should be possible to precisely control the properties of each nanotube, as well as its growth and length where it is assumed that the semiconductor and metal nanotubes can be grown to the desired precision, orientation, compression and Increasing speed will provide more complex electronics.
Conclusions Carbon nanotubes in replication and fabrication of CMOS nano-transistors:
Nanoelectronic circuits, especially RF and microwave blocks, require high-speed switches. Typically, transistors with very high speed transistors , up to 2 and heterogeneous bipolar MOSFET transistors with high electron mobility are up to about 600GHz and 750GHz respectively. These CMOS nano-transistors combine with synthetic semiconductors, especially nanotubes. The structure of nano-electronics may be the optical and optical device of most of these semiconductor components. The main reason for the possibility of engineering the energy gap in these compounds is over silicon.