Department of  Nano  Electronic Memory Laboratory

Testing the interaction of electronic particles in  molecular graphene Nano Memory Moulcolar 

Researcher  and author: Dr.   (   Afshin Rashid)


Note: The interaction of the electronic particles of the  adsorbed nanographene, which causes a change in the  electrical conductivity on the surface of  the Nano Memory Moulcolar graphene molecular nano memories  . The absorption  of a small amount of nano-electrons  with a very low molecular movement changes the resistance of nano-graphene,  which corresponds to  Nano Memory Moulcolar  . 

Graphene molecular nanomemories  show unique electronic properties, and its small dimensions, structural strength, and high performance make it very promising as a charge storage medium for nanomemory applications. Along with the development of miniaturized and enlarged devices, nanostructured graphene appears as an ideal material. Graphene molecular nano-memory  is a new non-volatile charge trapping memory using isolated and uniformly distributed graphene nano-crystals as a nano-floating gate with controllable capacity and excellent uniformity. The nanographene charge-trapping memory exhibits large gate memory (4.5 V) at low operating voltage (8 V), chemical and thermal stability (1000 °C), as well as tunable memory performance using differential tunneling. . Graphene has outstanding nanoelectronic properties, very high electron mobility and unparalleled conductivity at the nanoscale. It is a super conductor that transfers electrons ten times faster than silicon.  These characteristics have made graphene an ideal candidate for next-generation nanoelectronic applications such as   graphene molecular nano-memories . The efficiency of graphene particles in electromagnetic interference shielding and enhanced with modified graphene nanoribbons is measured. There are single-layer, double-layer and multi-layer  graphenes  . With its low thickness, this material is the hardest known material. Graphene is very transparent because  it has a thickness of one atom and allows light to pass through it and has high nano electrical conductivity.




Current nanoelectronics technologies in nanomemories hardly meet the demands, but nanotechnology offers better solutions. One of the new means of data storage is the use of nickel quantum dots in nanometer sizes, which are expected to be used to store terabytes of data, even in homes and in personal use. Given the relatively large (physically speaking) storage devices we have now and the fact that we need gigabyte sizes in various areas, there is a huge potential for activity in this area.Each quantum dot consists of a single ball of several hundred atoms that can have one of two magnetic states. This allows them to contain a single bit of information (zero or one), as is customary in machine computing. In conventional hard disks, the data bits must be spaced far enough apart that they do not overlap. Quantum dots act as completely independent units that are not structurally connected, so they can become somewhat closer to each other. They can be arranged to a certain density that allows any type of information to be stored up to 5 terabytes in a space the size of a postage stamp. Activities should continue until these nanodots work better and work with other computing devices such as silicon chips.



Conclusion : 

The interaction of the electronic particles of the  adsorbed nano-graphene, which causes a change in the  electrical conductivity on the surface of  the molecular nano-memories of nano-memory molecular graphene  . The absorption  of a small amount of nano-electrons  with a very low molecular movement changes the resistance of nano-graphene,  which corresponds to  Nano Memory Moulcolar  . 

Researcher  and author: Dr.   (   Afshin Rashid)

Specialized doctorate in nano-microelectronics