(Si-graphene field effect nanotransistor) Multilayer of a three-dimensional transmission current channel with modulated three-dimensional transmission channel thickness (PhD in Nano-Microelectronics)

Researcher  and author: Dr.   (   Afshin Rashid)





Note: In the circuit diagram of a multilayer Si graphene field nanotransistor, two source and drain electrodes are connected directly to the semiconductor, while the gate electrode is connected to the semiconductor capacitively using a gate dielectric. 
The electric field generated by the gate electrode controls the current generated by the two source and drain electrodes. The drain current is modulated by changing the density of the charge carriers in the two-dimensional transmission channel. In nanotransistors, the effect of a multilayer Si graphene field is modulated by a three-dimensional drain current channel with a three-dimensional transmission channel thickness. Numerous chemical and physical methods have been proposed for the production of various types of multilayer nano-graphene. The basis  of the physical methods is that in these methods they try to eliminate the forces between the graphene plates in  graphite and by separating them to reach the graphene or graphene oxide monolayers, which is the same method top-  down. Is. In chemical methods, multilayer nano-graphene is made by putting each carbon atom together,  which is also called the bottom-up method. 




 Graphene, which consists of only one carbon atom, can be used to create multilayer graphene field effect nanotransistors  that consume less energy and take up less space.Graphene is a semiconductor material with zero gap and unsuitable for logic circuits, but using nanotechnology, they create different forms of this material that have different gaps. Graphene nanofibers, multilayer graphenes, and graphene grown on Si are such forms. The term nano-transistor comes from the combination of the term nano-scale in transmission and resistance. In a graphene Si field effect nanotransistor, the resistance between two electrodes can be transmitted or controlled by a third electrode. In a multi-layer Si graphene field effect nanotransistor, the current between the two electrodes is controlled by an electric field from the third electrode. In contrast, the bipolar transistor is capacitively connected to the third electrode and is not in contact with the semiconductor. Three electrodes are connected to the source, drain and gate in the structure of the Si multilayer graphene field effect nanotransistor.




Conclusion : 

In the circuit diagram of a multilayer Si graphene field nanotransistor, two source and drain electrodes are connected directly to the semiconductor, while the gate electrode is capacitively connected to the semiconductor using a gate dielectric.
 

  • Researcher  and author: Dr.   (   Afshin Rashid)

    PhD in Nano-Microelectronics