_ Nanoreactors and (nanostructures) section
Nanoreactors and flexible multidimensional ( sTMD ) nanostructures in nanometer dimensions
Researcher and Author: Dr. ( Afshin Rashid)
Note: The properties of flexible multidimensional materials (sTMDs) at the nanoscale of modern semiconductors have revolutionized a wide range of technologies, including electronics, lighting, solar energy, and communications.
Most nanometals and metal nanoalloys, semiconductors, ceramics, and some nanopolymers that have a crystalline structure have long-range order in their structure. The extent of this order among atoms or ions is greater than 100 nanometers. The atoms or ions are regularly repeated in three dimensions. Materials with long-range order are called crystalline materials. If a material has one large crystal, it is called a single-crystal material.
Single-crystal materials are suitable for many electronic and optical applications, for example, computer chips are made from single-crystal silicon. Polycrystalline materials are made from many small crystals arranged in three dimensions. Monolayers are classified according to their stability into H or T structures, where H is the most common structure with TMD symmetry and trigonal prismatic metal coordination, and T represents a structure with multidimensional symmetry and octahedral metal coordination, and are unstable structures.
In particular, single-layer TMDs of the nano-multidimensional group are direct-gap semiconductors, while their bilayers and thicker multilayers have indirect gaps. For example, flexible multidimensional sTMD materials at the nanoscale all undergo an indirect-to-direct gap transition when passing from two layers to a single cross-layer. In general, the electronic structure of flexible multidimensional sTMD materials is dependent on the crystal phase, resulting in a wide range of electronic characters including metallic, semi-metallic, semiconductor, and superconductor (SC) for different flexible multidimensional sTMD materials.
Conclusion:
The nano-microelectronics industry uses Si for the fabrication of electronic circuits and GaAs, GaN and other III-V materials for optical nanodevices, with typical substrates consisting of wafers of flexible multidimensional materials sTMD grown at nanoscale at high temperatures. Precisely controlled thin films can be deposited on the substrate to achieve additional functionalities, for example by chemical vapor deposition (CVD) or molecular beam epitaxy.
Researcher and Author: Dr. ( Afshin Rashid)
Specialized PhD in Nano-Microelectronics