Field Effect Nano Transistors (Nano Teransistor Mosfet)
Graphene FET nanotransistors with different gap (0-2.1 eV)
Researcher and author: Dr. ( Afshin Rashid)
Note: Graphene nanomaterial, which is a material with a honeycomb structure and a thickness equal to a carbon layer, is used in the nanoelectronics industry and the manufacture of graphene nanotransistors due to its properties such as high mobility of electrons and holes and thermal and mechanical stability. FET was placed.
Although graphene is a semi-conducting material with zero gap and not suitable for logic circuits, but using nanoelectronics technology, different forms of this material are created to produce graphene FET nanotransistors, which have a different gap (0-2.1 eV). Graphene nano-ribbons, multilayer graphene and graphene grown on SiC for the reproduction of graphene nano-transistors such as these forms have caused a tremendous impact on the design industry of new nano-electronic devices. More than one effect transistor from graphene nano-layers. Graphene tunnel field FET, which uses graphene without energy band gap in its drain and source areas and graphene with limited band gap (eV2/1) is used in its catalysis part.
In the proposed structure, the rate reaches the appropriate amount that a graphene FET nanotransistor is suitable for digital structures, and the output characteristics also show a very suitable saturation state. There are basic parameters such as doping concentration, drain voltage, dielectric thickness and the difference between the work functions of gate electrode and graphene in three structures. that increasing the doping rate has an effect on the on current and increases it, which increases the doping rate of graphene FET nanotransistors, which makes these structures very suitable for use in low power devices.The word transistor comes from the combination of the two words transmission and resistance. In a FET graphene nanotransistor, the resistance between two electrodes can be transferred or controlled by a third electrode. The source connection and the drain connection are made through a semiconductor (graphene nano layer). The gate nano electrode is separated from the semiconductor by the electrical insulation of the gate dielectric layer. Therefore, the gate nano electrode is connected to the semiconductor in the form of a graphene layer and controls the electrostatic potential of the semiconductor/insulator interface.
Conclusion :
Graphene nano material, which is a material with a honeycomb structure and as thick as a carbon layer, is used in the nanoelectronics industry and the manufacture of graphene FET nanotransistors due to its properties such as high mobility of electrons and holes and thermal and mechanical stability. took
Researcher and author: Dr. ( Afshin Rashid)
Specialized doctorate in nano-microelectronics