(molecular nanoelectronics)

Molecular nanoelectronics and  compounds (III-V)  are the main factor in nano-devices such as nano-diodes

Researcher  and author: Dr.   (   Afshin Rashid)



Note: Compounds (III-V)  are the main factor in nano-devices such as nano-light emitting diodes  to determine this spectrum, the energy gap in the used semiconductor.

There is no other way to change the energy gap except  to use semiconductor compounds instead of semiconductor elements. A few decades ago, LEDs with  2 light spectrums, red and green, were made, but the possibility of making a blue nano LED with high brightness  remained an unsolvable mystery. Making LED with  blue light spectrum by GaN made it possible to produce white light with LED. Some of the  nano LED lamps are the most efficient  lamps, which are widely used day by day. Optical detectors are key components of these circuits. The main substrate for making these circuits  is the photonic crystal. Compounds (III-V) of optical nano-optical and nano-electronic devices are one of the most widely used nano-  microelectronics. Now it is possible to connect between silicon processor cores and peripheral memory By integrated optical communication channels made of compound semiconductors, with a very high data transfer rate  in other communication technologies and connection between processors, it  has been attracted to integrated optical nanoelectronics.



III-V compounds other than some elements of group 4 of the periodic table, i.e. Si and Ge, which are semiconductors, compounds of elements of group 3 with 5, group 2 with 6, and also alloys of group 4 with 4 also have semiconductor characteristics. Even  some compounds of the three elements of these groups, such as AlGaAs and InGaN, also have semiconductor properties  . At the beginning of the knowledge of these compounds and research on them, it was thought that they would soon replace silicon, because the possibility of engineering and obtaining some properties, which It didn't exist in silicon, it was available to them. But due to the lack of suitable insulation for use in the gate of transistors, as well as the high cost of elements and the layering process of V-III compound semiconductors, silicon and finally silicon-germanium alloy are still used as the main semiconductor.It should be noted that silicon oxide, which can be easily layered with high purity, is a very suitable insulator for this purpose. Nowadays, in integrated circuits with channel length below 50 nm, substitute oxides with higher dielectric coefficient such as zirconium oxide, ZrO2 and hafnium oxide are used. reached For example, in xAs-AlxGa1 and xN-InxGa1, the change of x leads to the change of energy gap and many properties of these compound semiconductor materials lead to the energy of the band structure. He finds the compounds (III-V) of nano-optical devices  (xAs-AlxGa1) in (x<45.0 mode) along with the changes in the distance between the edge of the valence band and the edge of the conduction band with the change of x in three different directions of wave propagation.



Conclusion : 

Perhaps nano-optical and opto-electronic devices will benefit the most from these (III-V) semiconductor compounds. The main reason is the possibility of engineering the energy gap in these compounds, unlike silicon.

Researcher  and author: Dr.   (   Afshin Rashid)

Specialized doctorate in nano-microelectronics