Nano-lithography of stencil masks (resolution up to 20 nm) in the manufacture of nanowire wafers

Nano-lithography of stencil masks (resolution up to 20 nm) in the manufacture of nanowire wafers (PhD in nano-microelectronics)

Researcher  and author: Dr.   (   Afshin Rashid)

Note: In this technique, a thin sheet with apertures designed, which is called a stencil mask, placed near the bed and in combination with evaporation materials  are used  . Evaporated material stops at the top surface of the stencil mask, except in the pores. So materials grow with specific patterns determined by the stencil mask.

 With the right stencil masks, nano-design materials can be grown on a wafer scale in one shot. Resolution up to 20 nm has been achieved and can be used in unconventional substrates such as rope  , but this technique addresses some of the problems associated with shadow deposition under the stencil mask and lifelong problems due to the deterioration of the stencil mask due to deposition. The material bears at the edge of the holes, and eventually clogs them (blocking effect). Advances such as the use of dynamic stencil masks have increased the range of applications of this technique.

Silicon wafer substrates can be used for sample substrates, microfiber substrates, substrates for nanowires or biological substrates. Useful flat bed  of silicone wafer particles Bonded with nanowires  and  for biological applications, Si (silicon wafer) has glass-like properties and can be used to mount or grow nanowire particles. It can be easily removed or used as a whole nanowire amplifier wafer. Silicon Nanowire Arrays or SiNWs are vertical arrays of silicon nanowires on a flat crystalline silicon wafer substrate. These nanowires are made by a catalytic oxidation and Si dissolution in the presence of metal catalyst nanoparticles - a self-organizing process commonly referred to as a metal-chemical reinforced process with the help of  Known as silicone wafers  .

Because nano-optical devices are manufactured using wafer-based processes in semiconductor fabrication, this provides flexible sharing capacity in production capacity and supports high-volume production capacity. . Some materials can create regular, nanoscale structures in well-controlled conditions - self-assembly. The problem with this approach is the inflexibility of achievable structures and usable materials that limit achievable performance.

Conclusion :

 Using appropriate stencil masks, nano-design materials can be grown on a wafer scale in one shot. Resolution up to 20 nm has been achieved and can be used in unconventional substrates such as rope  , but this technique addresses some of the problems associated with shadow deposition under the stencil mask and lifelong problems due to the deterioration of the stencil mask due to deposition. The material bears at the edge of the holes, and eventually clogs them (blocking effect). 

Researcher  and author: Dr.   (   Afshin Rashid)

PhD in Nano-Microelectronics