High-velocity plasmonic nano-lithography with half-step resolution (22 nm) PhD in nano-microelectronics
Researcher and author: Dr. ( Afshin Rashid)
Note: High-velocity plasma plasma nanolithography with a half-step resolution of 22 nm using multi-stage plasmon concentration through relatively low-diffusion surface plasmons is converted to localized plasmons. This allows highly efficient transmission and near-field focus, which is the key to improving power for a given laser power, by increasing the scanning speed and / or using a number of parallel patterns.
In essence, high-velocity plasmon nanoparticles with half-step resolution (22 nm) allow us to produce nano-electronic devices that can create 12-inch wafers in minutes. This is comparable to conventional photolithography at the production level but at a much higher resolution than the 22 nm half-step size. This new design enables low cost, high-performance nano-scale maskless production with several times higher power than conventional maskless methods. Using shorter wavelengths of plasmonic nanithithography and conduction mechanisms, it is possible to increase the continuous scale to a nodule size of less than 22 nanometers, opening a promising path for next-generation lithography to produce semiconductors. In addition, in next-generation magnetic data storage, known as nano-electronics with the help of heat and media with nano-bit pattern, it has a high potential to have twice the capacity in the future .
The application of nano-lithography is the construction of integrated circuits and other electronic devices in which optical lithography is widespread. In addition, various types of nano-lithography techniques are used in research activities with the aim of modeling materials and realizing prototypes and proof-of-concept devices. Methods of application of nano-lithography on a spin substrate Due to the specific interactions between these polymers and the substrate , in certain conditions, two types of polymers tend to create an intertwined pattern, there is a local order between both polymers and amplitudes. It forms a nanowire with a period in the range of 50 nanometers. This pattern will be very useful if the subsequent application of nanolithography, which after landing on the layer due to less penetration mobility, tends to accumulate on top of the polymer. Thus, the thin structure follows the polymer scaffold, which expands smoothly along different microns. However, the formed nanowires reveal some unwanted features as a closer look . Significant unevenness is observed in the fabrication of nanowires, and the nanowires are cut at certain points and deviate from the straight shape, which They are all typically the source of the deteriorating physical properties of nanowires. In addition, long-distance ordering of fabricated nanowire arrays does not follow this strategy, which is essential in certain applications such as the semiconductor industry.
Conclusion :
High-velocity plasmon nanoparticles with a half-step resolution of 22 nanometers are concentrated using relatively low-diffusion surface plasmons through relatively low-diffusion plasmons and later converted to localized plasmons. This allows highly efficient transmission and near-field focus, which is the key to improving power for a given laser power, by increasing the scanning speed and / or using a number of parallel patterns.
Researcher and author: Dr. ( Afshin Rashid)
PhD in Nano-Microelectronics