Field Effect Nano Transistors (Nano Teransistor Mosfet) Number of electric charges per unit of surface (field effect nanotransistors)

Field Effect Nano Transistors (Nano Teransistor Mosfet)

Number of electric charges per unit of surface (field effect nanotransistors)

Researcher  and author: Dr.   (   Afshin Rashid)

Note:  Unlike today's nanotransistors, which behave based on the movement of a mass of electrons in matter, the new devices follow the phenomena of quantum mechanics at the nanoscale, in which the discrete nature of the electron cannot be ignored. By reducing all the horizontal and vertical dimensions of the transistor, the electric charge density in different areas of the nano-transistor  increases, or in other words, the number of electric charges per unit area of ​​the nano-transistor increases. 

This event has two negative consequences  in (field effect nanotransistors) : First, with the increase in electric charge density, the possibility of electric charge discharge from the insulating areas of the transistor increases   , and this event causes damage to the transistor and its failure. This event is similar to the discharge of  excess electric charge between the cloud and the ground in the phenomenon of lightning, which causes the ionization of air molecules into  negative and positive ions. Secondly  , with the increase of the electric charge density, the electrons may  leave the range of the radius of one atom and enter the range of the neighboring atom's radius under the influence of repulsive or abduction forces, which have now increased in value. This  is called tunneling in quantum physics. Electron tunneling from one atom to the adjacent atom is a phenomenon that Small dimensions between electrons happen a lot. This phenomenon is the basis of the work of some electronic components and some  nanoscopes. But in nanotransistor, this phenomenon is not a useful phenomenon, because electron tunneling from one atom to the adjacent atom may  continue and cause an electric current. Although this electric current may be very  small, but because it is unwanted and unanticipated, it acts as a leakage path for electric current  and changes the electrical behavior of the nano-transistor.

We divide these devices into three parts: 

1) Carbon nanotube transistors

2) single electron devices

3) molecular nanoelectronic devices

The use of a nanowire as the metal-oxide-semiconductor field of a nano-effect transistor channel can enable a structure around a gate to provide excellent electrostatic gate control over the channel to reduce short-channel effects. which has been in the structure of nano circuits and  the basis of making electronic nano chips for computing devices.

Conclusion : 

Nano-microelectronics deals with new methods for making nano-transistors on a small scale,  the dimensions of which are several tens of nanometers, which is derived from the science called nanotechnology. By reducing all the horizontal and vertical dimensions of the transistor, the electric charge density in different areas of the nano-transistor  increases, or in other words, the number of electric charges per unit area of ​​the nano-transistor increases. 

Researcher  and author: Dr.   (   Afshin Rashid)

Specialized doctorate in nano-microelectronics