Field Effect Nano Transistors (Nano Teransistor Mosfet) CMOS field effect nano transistors

Field Effect Nano Transistors (Nano Teransistor Mosfet)

CMOS field effect nano transistors 

Researcher  and author: Dr.   (   Afshin Rashid)

Note:   CMOS nanotransistors are combined with compound semiconductors, especially  nanotubes, the structure of nanoelectronic compounds,  perhaps optical and optoelectronic devices can benefit the most from these semiconductor compounds. The main reason is the possibility of engineering the energy gap in these compounds, unlike silicon. 

Carbon nanotubes are tubes whose wall is graphene. These pipes can be single-walled or multi-walled. And it is used in the reproduction of CMOS nanotransistors. On the other hand, depending on the twisting and arrangement of carbon atoms at the edge of the tube, they are found in three forms: chair handle, ziggurag or 1. These three types of carbon nanotubes have very different characteristics. For example, 2-chiral chair handle structure behaves as a metal conductor, while chiral structure behaves as a semiconductor, and its reaction is a small part of the energy gap with carbon nanotubes, which have unique electrical and mechanical properties.For example, the structure of a nanotube, which is a thousand times more than copper, and the metal nanotube is capable of carrying an electric current with a density of cm/A, and these characteristics have led to the use of this material in the manufacture of electronic devices such as CMOS (semiconductor) transistors. to be Carbon nanotubes  have been proposed as a replacement for silicon in the MOSFET transistor channel. Nanotubes can solve some problems of reducing  the length of the channel in the transistor, such as electron tunneling from the inside of the channel or from the gate to the inside of the channel.

Nanotubes other than CMOS nanotransistors in making gauges and actuators  ; Supercapacitors are also used in many other industries. The main problem in the application of nanotubes is mainly that they must be used lying on the surface in order to be able to bond them and establish a metallic connection to achieve CMOS transistor behavior. This is while the nanotubes grow vertically. In addition, there should be the possibility of precise control over the characteristics of each nanotube as well as its growth location and length. They will increase the speed  of integrated electronics as much as possible. In nanoelectronics circuits, especially RF and microwave blocks, very high-speed switches are needed. Usually transistors with The records of very high speeds are 2 and inhomogeneous bipolar MOSFET transistors and high electron mobility up to about 600GHz and 750GHz respectively. 

Conclusion : 

CMOS nanotransistors are combined with compound semiconductors, especially  nanotubes, the structure of nanoelectronic compounds,  perhaps optical and optoelectronic devices can benefit the most from these semiconductor compounds. The main reason is the possibility of engineering the energy gap in these compounds, unlike silicon. 

Researcher  and author: Dr.   (   Afshin Rashid)

Specialized doctorate in nano-microelectronics