For the proliferation and evolution of nanotransistors, the existence of high thermal conductivity for single thermal nanotubes has been shown in theory (PhD in Nano-Microelectronics)
Researcher and author: Dr. ( Afshin Rashid)
Note: For the proliferation and evolution of nanotransistors, the existence of high thermal conductivity for single thermal nanotubes has been shown in theory. The results of laboratory experiments also indicate the presence of this feature in mass samples of single-walled carbon nanotubes as well as for single-walled single-walled nanotubes.
The thermal conductivity of single carbon nanotubes has been measured by computational methods. One set was single-walled carbon nanotubes that were stacked together to obtain the thermal conductivity of their assembly. One set was multi-walled carbon nanotubes that were separated . The thermal conductivity of these nanotubes was investigated separately. They achieved thermal conductivity greater than 011 mK / W for masses of single-walled carbon nanotubes. Also, according to the thermal conductivity of multi- walled carbon nanotubes separately is more than 300 mK / W. Since the structure of carbon nanotubes for the production and propagation of nanotransistors at different temperatures has different values, it is a function of It is represented by temperature and in the form of T (λ). Starting from low temperatures and gradually increasing the temperature, it is observed that the value of (T (λ) near the temperature of 011 K reaches a maximum value of 111.3 mK / W This maximum is seen as a peak in the diagram (and then decreases with increasing temperature . The maximum value) T (λ) that has been observed so far in the studies, is related to a specific nanotube sample of heat pipe at a temperature of 010 K is measured in. This value is equal to 00111 mk / W, so the value of T (λ (carbon nanotube at its maximum with the highest value) T (λ) that has been measured so far is comparable. The presented diagram, even at room temperature, the thermal conductivity of carbon nanotubes is very high and equal to 0011 mK / W,
In the methods of proliferation and evolution of nanotransistors and nanotubes
In the method of amplification of nanotransistors and nanotubes with the synthesis of carbon nanotubes based on catalytic chemical vapor deposition (CCVD) involves the decomposition of the carbon source on particles or small metal clusters as a catalyst. Be. The metals used for these reactions are intermediate metals , such as iron, cobalt, nickel. Compared to arc discharge and laser abrasion, carbon nanotubes generally form at lower temperatures of about 011 to 0111 degrees. This method is generally more selective for the production of multi-walled carbon nanotubes. Both homogeneous and heterogeneous processes are highly sensitive to the nature and structure of the catalyst used in addition to the operating conditions. Production of carbon nanotubes This method has a longer length (several tens to several hundred micrometers) and defects compared to the arc method. The greater disadvantage of nanotubes is due to the use of lower temperatures compared to the arc method, which does not allow any structural rearrangement.
Conclusion :
Researcher and author: Dr. ( Afshin Rashid)
PhD in Nano-Microelectronics